Growth and structural characteristics of Zn2TiO4 epitaxial films on MgAl2O4 substrates
The Zn<sub>2</sub>TiO<sub>4</sub> films were deposited on MgAl<sub>2</sub>O<sub>4</sub> substrates via pulsed laser deposition. Afterwards, post-annealing process was used to improve the crystallization quality of the films. The structural characteristics, surface morphology, and epitaxial mechanism of the films before and after annealing were analysed in detail. The results of XRD and HRTEM determined the high-quality epitaxial crystallization characteristics of the annealed film, and the epitaxial growth relationships were Zn<sub>2</sub>TiO<sub>4</sub> (400)//MgAl<sub>2</sub>O<sub>4</sub> (400) and Zn<sub>2</sub>TiO<sub>4</sub> [010]//MgAl<sub>2</sub>O<sub>4</sub> [010].
Authors
- Jin Ma (ORCID: https://orcid.org/0000-0003-0729-3611)
- Caìna Luan (ORCID: https://orcid.org/0000-0002-0644-5356)
- Hongyan Zhu (ORCID: https://orcid.org/0009-0007-5281-7927)
- Hongdi Xiao (ORCID: https://orcid.org/0000-0001-9341-1420)
- Biao Zhang (ORCID: https://orcid.org/0009-0006-9050-406X)
Institutions
- Shandong University (CN)
Publication Details
- Published
- 2025-09-19
- DOI
- https://doi.org/10.1117/12.3085353
- Primary Topic
- Microwave Dielectric Ceramics Synthesis
- Type
- article
- Field-Weighted Citation Impact
- 0.00