Influence of deposition temperature on the structural and electrical properties of In-Sn-Zn oxide thin films

Indium tin zinc oxide (ITZO) thin films, with a thickness of 200nm, were prepared on a glass substrate using radio frequency (RF) magnetron sputtering at various deposition temperatures with an ITZO ceramic target. The tests indicate that the ITZO thin films are amorphous and exhibit excellent photoelectric properties. Notably, the ITZO thin film deposited at 100 °C demonstrates outstanding electrical performance, featuring a high saturation field-effect mobility of 28.91 cm²/V·s, a carrier concentration of 1.75 × 10¹⁹ cm^-3, and a low resistivity of 0.012 Ω·cm.