Growth of Two‐Inch Perovskite CsPbBr ₃ Single‐Crystal with High Irradiation Resistance for X‐ray Detection

All-inorganic perovskite CsPbBr₃ crystals have demonstrated considerable promise in γ-ray and X-ray detection, owing to their excellent optoelectronic properties. However, the growth of large single crystals (SCs) and the stability of CsPbBr₃-based X-ray detectors under high-energy radiation exposure remain unexplored. In this study, a two-inch CsPbBr₃ single-crystal is grown using the vertical Bridgman (VB) method, and its irradiation resistance in X-ray detection performance is investigated after exposure to ⁶⁰Co γ-ray radiation. Compared with unirradiated samples, the crystals irradiated with a dose of 10 Mrad exhibit a higher trap density (1.59 × 10¹⁰ cm^-3) and a lower resistivity (8.2 × 10⁷ Ω cm). However, the Bi/CsPbBr₃/Au devices with asymmetric electrode structure exhibit an enhanced signal-to-noise ratio (14), a stable and low dark current density (7 nA cm^-2) with a current drift of 5.8 × 10^-15 A cm^-1 s^-1 V^-1, and a high sensitivity of 55722 µC Gyair^-1 cm^-2 for X-ray detection at an electric field of 3000 V cm^-1. Moreover, the irradiated device remained stable X-ray response characteristics after 220 days aging. These findings highlight the exceptional defect tolerance and irradiation stability of CsPbBr₃ devices for high-performance radiation detections, offering critical insights for their long-term deployment in high-radiation environments.