Effect of anti-relaxation coatings on EIT-based quantum memory in Cs vapor cells
Electromagnetically induced transparency (EIT) is a promising approach for implementing quantum memory, a key component of quantum communication networks. However, its storage time is limited by decoherence, primarily due to atomic motion. Anti-relaxation coatings can mitigate decoherence by minimizing atom-wall interactions. In this study, we experimentally investigate EIT-based quantum memory in cesium vapor cells with different anti-relaxation coatings. We compare the EIT characteristics and storage behavior across different coatings to assess their suitability for quantum memory applications.
Authors
- Oliver Slattery (ORCID: https://orcid.org/0009-0009-8673-6628)
- Thomas Gerrits (ORCID: https://orcid.org/0000-0001-8135-1811)
- Changhoon Park (ORCID: https://orcid.org/0009-0006-4820-2893)
- Xiao Tang (ORCID: https://orcid.org/0000-0001-9799-4109)
- Jing Su (ORCID: https://orcid.org/0000-0002-5321-1974)
- S.T. Hsu
- Lijun Ma (ORCID: https://orcid.org/0000-0002-7311-2631)
Institutions
- National Institute of Standards and Technology (US)
- Korea Institute of Science and Technology (KR)
- University of Maryland, College Park (US)
Publication Details
- Published
- 2025-09-18
- DOI
- https://doi.org/10.1117/12.3063186
- Primary Topic
- Quantum optics and atomic interactions
- Type
- article
- Field-Weighted Citation Impact
- 0.00