Hot carrier solar cells and valley photovoltaics

Recent work to elucidate intervalley scattering and hot carrier transfer and collection in GaAs/Al0.16Ga0.84As p-i-n diodes are presented. Evidence is provided of both photoexcited and field aided transfer of resonant and non-resonant photogenerated carriers from the Γ to L valley in the GaAs absorber. Furthermore, evidence of valley transfer across the GaAs/Al0.16Ga0.84As interface is also presented demonstrating the ability to overcome an important property that has limited previous approaches to valley photovoltaics.