Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg

An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.

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Publication Details

Journal
Power Electronic Devices and Components
Published
2025-09-18
DOI
https://doi.org/10.1016/j.pedc.2025.100120
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg

Francesco Iannuzzo, Giacomo Scelba, Emre Gurpinar, Maria Giorgia Spitaleri
Power Electronic Devices and Components
Silicon Carbide Semiconductor Technologies
article

Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg

Francesco Iannuzzo, Giacomo Scelba, Emre Gurpinar, Maria Giorgia Spitaleri
article en

Abstract

An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.

Power Electronic Devices and ComponentsVol. 12
Openalex Percentile: Top 75%
Silicon Carbide Semiconductor Technologies
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