Interface engineering of co-evaporated Sb <sub>2</sub> Se <sub>3</sub> solar cells using an ALD SnO <sub> <i>x</i> </sub> interlayer

Introducing an ALD SnO x interlayer at the Sb 2 Se 3 /CdS interface enhances co-evaporated Sb 2 Se 3 solar cells, achieving 7.395% efficiency by suppressing carrier recombination, blocking Sb diffusion, and stabilizing the Sb 2 Se 3 /CdS interface.

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Publication Details

Journal
EES solar.
Published
2025-01-01
DOI
https://doi.org/10.1039/d5el00031a
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

Interface engineering of co-evaporated Sb 2 Se 3 solar cells using an ALD SnO x interlayer

Dae‐Kue Hwang, Kee‐Jeong Yang, Jin‐Kyu Kang, Jaebaek Lee et al.
3 citations
EES solar.
Chalcogenide Semiconductor Thin Films
2.19
article

Interface engineering of co-evaporated Sb 2 Se 3 solar cells using an ALD SnO x interlayer

Dae‐Kue Hwang, Kee‐Jeong Yang, Jin‐Kyu Kang, Jaebaek Lee, Amanat Ali, William Jo, Hyo Jeong Jo, Shi‐Joon Sung, Eunkyung Cho, Van‐Quy Hoang, Dae‐Hwan Kim, Dong‐Hwan Jeon, Geumha Lim, Dae‐Ho Son, Bashiru Kadiri‐English
article en
3 citations

Abstract

Introducing an ALD SnO x interlayer at the Sb 2 Se 3 /CdS interface enhances co-evaporated Sb 2 Se 3 solar cells, achieving 7.395% efficiency by suppressing carrier recombination, blocking Sb diffusion, and stabilizing the Sb 2 Se 3 /CdS interface.

EES solar.Vol. 1(6)
Ewha Womans University (KR), Daegu Gyeongbuk Institute of Science and Technology (KR), VinUniversity (VN)
Openalex Percentile: Top 11%
Chalcogenide Semiconductor Thin Films
2.19
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Interface engineering of co-evaporated Sb <sub>2</sub> Se <sub>3</sub> solar cells using an ALD SnO <sub> <i>x</i> </sub> interlayer — Dae‐Kue Hwang, Kee‐Jeong Yang, et al. · EES solar. (2025) | TGRS Research Map | TGRS