In-plane anisotropy-driven directional charge transport in van der Waals p–n heterojunctions

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a p-GeS/n-MoS<sub>2</sub> heterostructure diode is investigated, where the anisotropic band dispersion of GeS, revealed by angle-resolved photoemission spectroscopy (ARPES), governs directional charge flow. Angle-resolved Raman spectroscopy confirms the crystallographic orientation, and transport measurements in GeS field-effect transistors (FETs) show a mobility anisotropy of ∼3.4. The heterojunction exhibits orientation-dependent diode characteristics, anti-ambipolar transport, and a type-II band alignment, leading to anisotropic optoelectronic response. These findings establish a pathway for utilizing electronic anisotropy in vdW heterostructures for energy-efficient rectification.

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Publication Details

Journal
Nanoscale
Published
2025-01-01
DOI
https://doi.org/10.1039/d5nr02390d
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55
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article

In-plane anisotropy-driven directional charge transport in van der Waals p–n heterojunctions

Soumik Das, Tanima Kundu, Alexei Barinov, Kapildeb Dolui et al.
3 citations
Nanoscale
2D Materials and Applications
1.55
article

In-plane anisotropy-driven directional charge transport in van der Waals p–n heterojunctions

Soumik Das, Tanima Kundu, Alexei Barinov, Kapildeb Dolui, Rahul Paramanik, Subhadeep Datta, Sanjoy Kr Mahatha, Mainak Palit, Bikash Kumar Das, Sujan Maity, Bipul Karmakar
article en
3 citations

Abstract

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a p-GeS/n-MoS<sub>2</sub> heterostructure diode is investigated, where the anisotropic band dispersion of GeS, revealed by angle-resolved photoemission spectroscopy (ARPES), governs directional charge flow. Angle-resolved Raman spectroscopy confirms the crystallographic orientation, and transport measurements in GeS field-effect transistors (FETs) show a mobility anisotropy of ∼3.4. The heterojunction exhibits orientation-dependent diode characteristics, anti-ambipolar transport, and a type-II band alignment, leading to anisotropic optoelectronic response. These findings establish a pathway for utilizing electronic anisotropy in vdW heterostructures for energy-efficient rectification.

NanoscaleVol. 17(41)
Indian Association for the Cultivation of Science (IN), Elettra-Sincrotrone Trieste S.C.p.A. (IT), Indian Institute of Technology Tirupati (IN), UGC DAE Consortium for Scientific Research (IN)
Openalex Percentile: Top 16%
2D Materials and Applications
1.55
DOISourceOpenAlex
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In-plane anisotropy-driven directional charge transport in van der Waals p–n heterojunctions — Soumik Das, Tanima Kundu, et al. · Nanoscale (2025) | TGRS Research Map | TGRS