Investigations on the impact of nickel doping on thermoelectric properties in n-type Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub> alloy

The incorporation of transition metals into alloys allows for the modification of carrier concentration and the optimization of electrical transport properties. This study investigates the impact of Ni on the thermoelectric properties of the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub> alloy. Samples of Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub>/<i>x</i>%Ni with varying Ni concentrations (<i>x</i> = 0, 1, 2, 3, 4, and 5) were synthesized using the solid-state reaction method, resulting in homogeneous, dense compounds characterized by a rhombohedral crystal structure and granular morphology. The electrical resistivity exhibits a gradual increase with increase in Ni concentration, attributed to enhanced electron scattering that diminishes carrier mobility. The negative Seebeck coefficients suggest that electron-dominant charge carriers predominantly influence the thermoelectric transport of the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub> system. The maximum Seebeck coefficient recorded is approximately 185 μV K<sup>-1</sup> for the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub>/3%Ni sample. The lattice thermal conductivity significantly contributes to the overall thermal conductivity, which increases with the addition of Ni due to the reduction in point defect scattering resulting from the Ni incorporation. The pristine sample demonstrates the lowest thermal conductivity of 19 mW cm<sup>-1</sup> K<sup>-1</sup> at 350 K. The highest power factor is approximately 1.56 mW mK<sup>-2</sup> at 350 K, which is nearly identical for samples with compositions <i>x</i> = 0 and <i>x</i> = 1% Ni. The highest figure of merit (<i>ZT</i>) achieved is approximately 0.27 for the pristine sample at 350 K.

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Journal
RSC Advances
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ra05504k
Primary Topic
Advanced Thermoelectric Materials and Devices
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article
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article

Investigations on the impact of nickel doping on thermoelectric properties in n-type Bi1.8Sb0.2Te3 alloy

Y. K. Kuo, P. Poornesh, N. V. Srihari, K. Gurukrishna et al.
RSC Advances
Advanced Thermoelectric Materials and Devices
article

Investigations on the impact of nickel doping on thermoelectric properties in n-type Bi1.8Sb0.2Te3 alloy

Y. K. Kuo, P. Poornesh, N. V. Srihari, K. Gurukrishna, Dhanya Sunil, Ashok Rao, G. Poojitha
article en

Abstract

The incorporation of transition metals into alloys allows for the modification of carrier concentration and the optimization of electrical transport properties. This study investigates the impact of Ni on the thermoelectric properties of the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub> alloy. Samples of Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub>/<i>x</i>%Ni with varying Ni concentrations (<i>x</i> = 0, 1, 2, 3, 4, and 5) were synthesized using the solid-state reaction method, resulting in homogeneous, dense compounds characterized by a rhombohedral crystal structure and granular morphology. The electrical resistivity exhibits a gradual increase with increase in Ni concentration, attributed to enhanced electron scattering that diminishes carrier mobility. The negative Seebeck coefficients suggest that electron-dominant charge carriers predominantly influence the thermoelectric transport of the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub> system. The maximum Seebeck coefficient recorded is approximately 185 μV K<sup>-1</sup> for the Bi<sub>1.8</sub>Sb<sub>0.2</sub>Te<sub>3</sub>/3%Ni sample. The lattice thermal conductivity significantly contributes to the overall thermal conductivity, which increases with the addition of Ni due to the reduction in point defect scattering resulting from the Ni incorporation. The pristine sample demonstrates the lowest thermal conductivity of 19 mW cm<sup>-1</sup> K<sup>-1</sup> at 350 K. The highest power factor is approximately 1.56 mW mK<sup>-2</sup> at 350 K, which is nearly identical for samples with compositions <i>x</i> = 0 and <i>x</i> = 1% Ni. The highest figure of merit (<i>ZT</i>) achieved is approximately 0.27 for the pristine sample at 350 K.

RSC AdvancesVol. 15(41)
Manipal Academy of Higher Education (IN), National Dong Hwa University (TW), Indian Institute of Technology Kanpur (IN)
Openalex Percentile: Top 81%
Advanced Thermoelectric Materials and Devices
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