Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Abstract Thermal transport in nanoscale interconnects is dominated by intricate electron–phonon interactions and microstructural influences. As copper faces limitations at the nanoscale, tungsten and ruthenium have emerged as promising alternatives due to their substantial phonon contributions to thermal conductivity. Metals with stronger phonon‐mediated thermal transport are particularly advantageous in nanoscale architectures, where phonons are less sensitive to size effects than electrons. Here, it is showed that phonons play a comparable role to electrons in the thermal transport of ruthenium and tungsten thin films, as evidenced by elevated Lorenz numbers, up to 1.9 and 2.7 times the Sommerfeld value for ruthenium and tungsten, respectively, indicative maximum of phonon contributions of 45% and 62% to total thermal conductivity. Comparisons of in‐plane thermal conductivity from steady‐state thermoreflectance and electron relaxation times from infrared ellipsometry reveal that phonon‐mediated transport is insensitive to microstructural variations and scaling. Ultrafast infrared pump–probe measurements show that ruthenium exhibits a higher electron–phonon coupling factor than tungsten, consistent with the differing contributions of carriers to thermal transport. Molecular dynamics simulations and spectral energy density analysis confirm substantial phonon‐driven thermal transport and mode‐dependent phonon lifetimes. These results offer insights into phonon‐driven thermal transport and provide design principles for selecting interconnects with enhanced thermal management.