Demonstration of a microcavity LED with a nanoporous DBR and a GaN tunnel junction contact
Gallium nitride (GaN) microcavity light-emitting diodes (MCLEDs) have demonstrated useful properties for visible light communication (VLC) via improved directionality is useful for free space transmission, and their limited fiber mode dispersion leads to faster modulation bandwidth in fiber communication compared to standard LEDs. Here, we report the first demonstration, to the best of our knowledge, of resonant cavity effects observed in a LED with an air/GaN interface as top mirror with a top GaN tunnel junction (TJ) contact, and an epitaxial nanoporous distributed Bragg reflector (NPDBR) as bottom mirror. The abrupt top air/GaN interface offers improved light extraction compared to dielectric DBRs and simplifies the topside contact.
Authors
- Claude Weisbuch (ORCID: https://orcid.org/0000-0001-5403-5274)
- R. Chao (ORCID: https://orcid.org/0009-0001-3267-5956)
- Shuji Nakamura (ORCID: https://orcid.org/0000-0001-6334-2428)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Jon A. Schuller (ORCID: https://orcid.org/0000-0001-6949-3569)
- Stephen Gee (ORCID: https://orcid.org/0000-0002-2082-5929)
- Amy Zhang (ORCID: https://orcid.org/0000-0003-4301-9265)
- Hsiaotao T. Bi (ORCID: https://orcid.org/0009-0004-1393-7633)
- Alejandro M. Quevedo
Institutions
- University of California, Santa Barbara (US)
Publication Details
- Published
- 2025-09-18
- DOI
- https://doi.org/10.1117/12.3064250
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00