Quantum size effect during normal incidence of a beam of medium energy electrons on a growing heteroepitaxial film

The reflection coefficient of medium-energy electrons (about 10 KeV) was calculated for their normal incidence on a thin growing single-crystal film. It is shown that in this case a quantum size effect occurs, which manifests itself in harmonic oscillations of the intensity of the reflected beam. The amplitude and period of oscillations depend on the thickness of the growing film and the energy of the incident electrons. A graphic illustration of the results obtained is provided.

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Publication Details

Journal
Кристаллография / Crystallography Reports
Published
2025-01-01
DOI
https://doi.org/10.7868/s3034551025010139
Primary Topic
Electron and X-Ray Spectroscopy Techniques
Type
article
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article

Quantum size effect during normal incidence of a beam of medium energy electrons on a growing heteroepitaxial film

S. M. Shkornyakov
Кристаллография / Crystallography Reports
Electron and X-Ray Spectroscopy Techniques
article

Quantum size effect during normal incidence of a beam of medium energy electrons on a growing heteroepitaxial film

S. M. Shkornyakov
article en

Abstract

The reflection coefficient of medium-energy electrons (about 10 KeV) was calculated for their normal incidence on a thin growing single-crystal film. It is shown that in this case a quantum size effect occurs, which manifests itself in harmonic oscillations of the intensity of the reflected beam. The amplitude and period of oscillations depend on the thickness of the growing film and the energy of the incident electrons. A graphic illustration of the results obtained is provided.

Кристаллография / Crystallography ReportsVol. 70(1)
Openalex Percentile: Top 76%
Electron and X-Ray Spectroscopy Techniques
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Quantum size effect during normal incidence of a beam of medium energy electrons on a growing heteroepitaxial film — S. M. Shkornyakov · Кристаллография / Crystallography Reports (2025) | TGRS Research Map | TGRS