Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

We demonstrate stimulated Raman scattering microscopy for non-destructive, volumetric measurement of residual stresses within silicon wafers, employing a pump beam at 1.56 µm and a Stokes beam at 1.7 µm.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.aa118_1
Primary Topic
Spectroscopy Techniques in Biomedical and Chemical Research
Type
article
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article

Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

Hiroyuki Omiya, Yasuyuki Ozeki, Masahiro Nomura, Yuki Sano et al.
Spectroscopy Techniques in Biomedical and Chemical Research
article

Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths

Hiroyuki Omiya, Yasuyuki Ozeki, Masahiro Nomura, Yuki Sano, Y. Mita, Kenichi Oguchi, S. Itoh, K Tsuji
article en

Abstract

We demonstrate stimulated Raman scattering microscopy for non-destructive, volumetric measurement of residual stresses within silicon wafers, employing a pump beam at 1.56 µm and a Stokes beam at 1.7 µm.

Openalex Percentile: Top 82%
Spectroscopy Techniques in Biomedical and Chemical Research
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Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths — Hiroyuki Omiya, Yasuyuki Ozeki, et al. · (2025) | TGRS Research Map | TGRS