Volumetric non-destructive imaging of strain in silicon using stimulated Raman scattering at telecom wavelengths
We demonstrate stimulated Raman scattering microscopy for non-destructive, volumetric measurement of residual stresses within silicon wafers, employing a pump beam at 1.56 µm and a Stokes beam at 1.7 µm.
Authors
- Hiroyuki Omiya
- Yasuyuki Ozeki (ORCID: https://orcid.org/0000-0002-9004-0799)
- Masahiro Nomura
- Yuki Sano (ORCID: https://orcid.org/0000-0003-0690-1785)
- Y. Mita
- Kenichi Oguchi (ORCID: https://orcid.org/0000-0003-1110-4609)
- S. Itoh
- K Tsuji
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.aa118_1
- Primary Topic
- Spectroscopy Techniques in Biomedical and Chemical Research
- Type
- article
- Field-Weighted Citation Impact
- 0.00