Micro-Transfer Printed 58 Gbps Indium Phosphide Modulators Integrated with Low-Loss Silicon Nitride
Traveling-wave Indium Phosphide electro absorption modulators were developed for micro-transfer print integration with low-loss silicon nitride waveguides. Large signal modulation was demonstrated up to 58 Gbps.
Authors
- Fatih Bilge Atar (ORCID: https://orcid.org/0000-0001-7517-4855)
- Thomas Meißner (ORCID: https://orcid.org/0000-0002-3508-0237)
- Diya Hu
- Jonathan Klamkin (ORCID: https://orcid.org/0000-0001-9911-6879)
- Ali Uzun (ORCID: https://orcid.org/0000-0003-3854-2780)
- Chongxin Zhang (ORCID: https://orcid.org/0009-0006-1865-7547)
- Yuan Liu (ORCID: https://orcid.org/0000-0003-0677-3111)
- Brian Corbett (ORCID: https://orcid.org/0000-0002-9002-8212)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.aa127_7
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00