A Large-mode-area Erbium-doped waveguide amplifier with more than 18 dBm output power
We demonstrate a large-mode-area erbium-doped waveguide amplifier based on the heterogeneous integration of Si 3 N 4 waveguide and Er 3+ : Al 2 O 3 film. It exhibits over 18 dBm on-chip output power at 1533 nm within an 8-cm-long waveguide.
Authors
- Xingwen Yi (ORCID: https://orcid.org/0000-0002-7440-3545)
- Chunxu Wang (ORCID: https://orcid.org/0000-0001-6871-9730)
- Qingming Chen (ORCID: https://orcid.org/0000-0003-1120-0545)
- Zhaohui Li (ORCID: https://orcid.org/0000-0002-3532-4393)
- J. X. Song
- Yifan Zhang (ORCID: https://orcid.org/0009-0001-0873-3853)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.jps100_150
- Primary Topic
- Advanced Fiber Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00