8-inch wafer fabrication of tight confinement silicon nitride integrated circuits
We demonstrate large-scale photonic integrated fabrication for over 800nm silicon nitride(Si3N4) films using low-cost complementary metal oxide semiconductor (CMOS) standard deep ultraviolet (DUV) stepper lithography subtraction process on 8-inch (200mm diameter) wafers.
Authors
- Tingge Dai (ORCID: https://orcid.org/0000-0002-8491-4074)
- Bo Hou (ORCID: https://orcid.org/0000-0002-4524-3669)
- Yuehai Wang (ORCID: https://orcid.org/0000-0002-5084-0572)
- Dong‐Hui Chen (ORCID: https://orcid.org/0000-0003-2561-2444)
- Zichao Zhao (ORCID: https://orcid.org/0009-0002-4824-922X)
- Hui Liu (ORCID: https://orcid.org/0000-0003-2693-2546)
- Chengyuan Wang (ORCID: https://orcid.org/0000-0002-9790-4342)
- Jianyi Yang (ORCID: https://orcid.org/0000-0002-3142-5015)
- Qishen Liang
- Haoran Ma (ORCID: https://orcid.org/0009-0007-0064-450X)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.aa129_5
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00