RECOMBINATION-ENHANCED OF DISLOCATION GLIDE IN 4H-SiC AND GaN UNDER ELECTRON BEAM IRRADIATION

The analysis of the investigations of recombination-enhanced dislocation transport in GaN and 4H-SiC is carried out. It is shown that in both crystals, when irradiated with a low-energy electron beam, dislocations can shift even at liquid nitrogen temperature. The activation energies of dislocation glide stimulated by electron beam irradiation are estimated. The results are presented demonstrating practically activation-free migration of double kinks along a 30° partial dislocation with a silicon core in 4H-SiC. It is shown that localized obstacles significantly affect the dislocation transport in GaN both under the action of shear stresses and under irradiation. Nonequilibrium charge carriers introduced into GaN by irradiation not only help to overcome the Peierls barrier, but also stimulate the detachment of dislocations from obstacles.