AlGaN/GaN-Based HEMT-Type Multi-Functional Ultraviolet Phototransistors and Arrays as High-Quality Imaging
We reported a multi-functional GaN-HEMT-type phototransistor with a graded AlGaN back barrier. Leveraging the programmable 2DEG by epi-structures and voltages, devices show reconfigurable photoresponsive behaviors with superior characteristics, laying foundation of high-quality 10×10-array imaging units.
Authors
- Huabin Yu (ORCID: https://orcid.org/0000-0003-2487-2076)
- Fangzhou Liang
- Muhammad Hunain Memon (ORCID: https://orcid.org/0000-0002-3970-8925)
- Haiding Sun
- Haochen Zhang (ORCID: https://orcid.org/0000-0001-7664-9074)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.aa121_4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00