Ultra-high-Q photonic integrated chips on 8-inch dispersion-engineered Si3N4-SiO2-Si wafer

We demonstrate robust fabrication of 8-inch crack-free, dispersion-engineered Si 3 N 4 -SiO 2 -Si wafers. Combined with an amorphous silicon hardmask etching technique, we achieve high-quality microring resonators with an intrinsic quality factor exceeding 25 . 1 × 10 6 , corresponding to propagation loss of 1.6 dB/m.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.aa129_6
Primary Topic
Photonic and Optical Devices
Type
article
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article

Ultra-high-Q photonic integrated chips on 8-inch dispersion-engineered Si3N4-SiO2-Si wafer

Zheshen Zhang, Jianfeng Wu, Matthew W. Puckett, Abdulkarim Hariri et al.
Photonic and Optical Devices
article

Ultra-high-Q photonic integrated chips on 8-inch dispersion-engineered Si3N4-SiO2-Si wafer

Zheshen Zhang, Jianfeng Wu, Matthew W. Puckett, Abdulkarim Hariri, Shuai Liu
article en

Abstract

We demonstrate robust fabrication of 8-inch crack-free, dispersion-engineered Si 3 N 4 -SiO 2 -Si wafers. Combined with an amorphous silicon hardmask etching technique, we achieve high-quality microring resonators with an intrinsic quality factor exceeding 25 . 1 × 10 6 , corresponding to propagation loss of 1.6 dB/m.

Openalex Percentile: Top 75%
Photonic and Optical Devices
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Ultra-high-Q photonic integrated chips on 8-inch dispersion-engineered Si3N4-SiO2-Si wafer — Zheshen Zhang, Jianfeng Wu, et al. · (2025) | TGRS Research Map | TGRS