Single pump Stokes soliton in 4H-Silicon Carbide-on-insulator microresonators

We observed that we can access a Raman stokes soliton corresponding to dominant Raman shift of ⁓777 cm -1 . The stoke soliton was accessed by simply slow tuning and using a single pump laser wavelength, transitioning through a chaotic Raman comb regime. This was achieved at an on-chip power of ⁓200 mW.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.jps200_180
Primary Topic
Advanced Fiber Laser Technologies
Type
article
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article

Single pump Stokes soliton in 4H-Silicon Carbide-on-insulator microresonators

Xiaodong Shi, Shuangyou Zhang, Adnan Ali Afridi, Ruixuan Wang et al.
Advanced Fiber Laser Technologies
article

Single pump Stokes soliton in 4H-Silicon Carbide-on-insulator microresonators

Xiaodong Shi, Shuangyou Zhang, Adnan Ali Afridi, Ruixuan Wang, Haiyan Ou, Yurong Ren, Yongsheng Wang, Qing Li, Jingwei Li
article en

Abstract

We observed that we can access a Raman stokes soliton corresponding to dominant Raman shift of ⁓777 cm -1 . The stoke soliton was accessed by simply slow tuning and using a single pump laser wavelength, transitioning through a chaotic Raman comb regime. This was achieved at an on-chip power of ⁓200 mW.

Openalex Percentile: Top 80%
Advanced Fiber Laser Technologies
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