High-mobility Hydrogen-Doped Indium Oxide as Epsilon-Near-Zero Material

We investigated hydrogen-doped indium oxide as a new epsilon-near-zero material compared with commercial indium-tin-oxide. Using RF-sputtering deposition and various characterization techniques, we achieved 111 cm 2 /V-s optical mobility and 112 cm 2 /V-s electric mobility.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.jps200_77
Primary Topic
ZnO doping and properties
Type
article
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article

High-mobility Hydrogen-Doped Indium Oxide as Epsilon-Near-Zero Material

Sudipta Biswas, Alan X. Wang, Saika Muntaha Bari
ZnO doping and properties
article

High-mobility Hydrogen-Doped Indium Oxide as Epsilon-Near-Zero Material

Sudipta Biswas, Alan X. Wang, Saika Muntaha Bari
article en

Abstract

We investigated hydrogen-doped indium oxide as a new epsilon-near-zero material compared with commercial indium-tin-oxide. Using RF-sputtering deposition and various characterization techniques, we achieved 111 cm 2 /V-s optical mobility and 112 cm 2 /V-s electric mobility.

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ZnO doping and properties
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High-mobility Hydrogen-Doped Indium Oxide as Epsilon-Near-Zero Material — Sudipta Biswas, Alan X. Wang, et al. · (2025) | TGRS Research Map | TGRS