Purcell-enhanced Silicon T center via Two-dimensional Photonic Crystal

We examine the Purcell enhancement of T-center 1325.9 nm excitonic transitions in SOI substrates. We use 3 (L3), 5 (L5), and 7 (L7) missing holes in two-dimensional (2D) photonic crystal nanocavities to create the photonic bandgap due to total internal reflection.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.jps200_119
Primary Topic
Photonic Crystals and Applications
Type
article
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Purcell-enhanced Silicon T center via Two-dimensional Photonic Crystal

Murat Can Sarihan, Jin Ho Kang, Cody Fan, Jiahui Huang et al.
Photonic Crystals and Applications
article

Purcell-enhanced Silicon T center via Two-dimensional Photonic Crystal

Murat Can Sarihan, Jin Ho Kang, Cody Fan, Jiahui Huang, Chee Wei Wong, Andrew Lin
article en

Abstract

We examine the Purcell enhancement of T-center 1325.9 nm excitonic transitions in SOI substrates. We use 3 (L3), 5 (L5), and 7 (L7) missing holes in two-dimensional (2D) photonic crystal nanocavities to create the photonic bandgap due to total internal reflection.

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Photonic Crystals and Applications
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Purcell-enhanced Silicon T center via Two-dimensional Photonic Crystal — Murat Can Sarihan, Jin Ho Kang, et al. · (2025) | TGRS Research Map | TGRS