Doublet Emission in a Carbon Related Silicon Color Center
We discovered a silicon color center with a doublet emission at 1234.8 nm and 1234.3 nm after implanting with carbon and a two-step annealing process. The power dependence of this color center is also investigated.
Authors
- Murat Can Sarihan (ORCID: https://orcid.org/0000-0003-3800-7980)
- Baolai Liang (ORCID: https://orcid.org/0000-0002-2192-9340)
- Jin Ho Kang (ORCID: https://orcid.org/0000-0002-5891-4281)
- Cody Fan (ORCID: https://orcid.org/0000-0002-6810-3730)
- Jiahui Huang (ORCID: https://orcid.org/0000-0002-2249-6700)
- Chee Wei Wong (ORCID: https://orcid.org/0000-0001-7652-7720)
- Andrew Lin
- Khalifa M. Azizur-Rahman (ORCID: https://orcid.org/0009-0007-4101-5152)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.jps200_192
- Primary Topic
- Silicon Nanostructures and Photoluminescence
- Type
- article
- Field-Weighted Citation Impact
- 0.00