Integrated microheater on the 4H-SiC-on-insulator platform and its applications

Microheaters are integrated into the 4H-silicon-carbide-on-insulator platform, featuring a resonance shift rate of 17.5 pm/mW and a time constant around 7 s. Single-soliton state in a compact microring is accessed using the fast thermo-optic scan.

Authors

Jingwei Li (ORCID: https://orcid.org/0009-0008-4836-8484)
Zhixu Jia (ORCID: https://orcid.org/0000-0002-9857-9772)
Ruixuan Wang (ORCID: https://orcid.org/0000-0003-1944-5264)
Haipeng Zheng
Qing Li (ORCID: https://orcid.org/0000-0003-0207-2289)
Wenhan Sun

Publication Details

Published: 2025-01-01
DOI: https://doi.org/10.1364/cleo_at.2025.aa127_2
Primary Topic: Photonic and Optical Devices
Type: article
Field-Weighted Citation Impact: 0.00

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article

Integrated microheater on the 4H-SiC-on-insulator platform and its applications

Jingwei Li, Zhixu Jia, Ruixuan Wang, Haipeng Zheng et al.

Jan 1, 2025

Photonic and Optical Devices

article

Integrated microheater on the 4H-SiC-on-insulator platform and its applications

Jingwei Li, Zhixu Jia, Ruixuan Wang, Haipeng Zheng, Qing Li, Wenhan Sun

January 1, 2025article en

Abstract

Microheaters are integrated into the 4H-silicon-carbide-on-insulator platform, featuring a resonance shift rate of 17.5 pm/mW and a time constant around 7 s. Single-soliton state in a compact microring is accessed using the fast thermo-optic scan.

Openalex Percentile: Top 75%

Photonic and Optical Devices

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Integrated microheater on the 4H-SiC-on-insulator platform and its applications — Jingwei Li, Zhixu Jia, et al. · (2025) | TGRS Research Map | TGRS