Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

We demonstrate mass-manufacturable, ultra-fast, high-power Ge-PIN-PDs in a 300-mm CMOS silicon photonics foundry, achieving >135GHz bandwidth, 0.96A/W responsivity, -36dB ORL, and high-quality 120Gb/s NRZ and 240Gb/s PAM4 eyes at 1mA photocurrent without TIA.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.pd104_7
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73
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Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

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article

Ultra-fast high-power Ge PIN photodetectors with record-high bandwidth responsivity product of 130 GHz·A/W in 300-mm monolithic CMOS silicon photonics foundry

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article en
1 citations

Abstract

We demonstrate mass-manufacturable, ultra-fast, high-power Ge-PIN-PDs in a 300-mm CMOS silicon photonics foundry, achieving >135GHz bandwidth, 0.96A/W responsivity, -36dB ORL, and high-quality 120Gb/s NRZ and 240Gb/s PAM4 eyes at 1mA photocurrent without TIA.

Openalex Percentile: Top 23%
Photonic and Optical Devices
0.73
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