Excitation Spectroscopy for Single Photon Emitters in GaN
In this work, we analyse the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN.
Authors
- Henryk Turski (ORCID: https://orcid.org/0000-0002-2686-9842)
- Pawel Prystawko (ORCID: https://orcid.org/0000-0003-0762-5639)
- Tomasz Jakubczyk (ORCID: https://orcid.org/0000-0002-8875-4514)
- P. Kossacki (ORCID: https://orcid.org/0000-0002-7558-1044)
- Michał Kobecki (ORCID: https://orcid.org/0000-0003-4528-3983)
- Nilesh Dalla (ORCID: https://orcid.org/0000-0001-7315-1019)
- Paweł Kulboka
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.jps200_1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00