GaN Photonic Integrated Circuits with High Extinction Ratio in O-band and Short-Wavelength Infrared Range

A microring resonator with an intrinsic Q-factor of ∼2.67 × 104 and an extinction ratio (ER) of 35.1 dB at 1320 nm, is monolithically integrated with grating couplers and a ridge waveguide on a GaN-on-sapphire platform. By further designing apodized grating couplers, working wavelength of our GaN PIC extends to near infrared wavelength (~2.1 um).

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_at.2025.jps100_139
Primary Topic
Photonic and Optical Devices
Type
article
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article

GaN Photonic Integrated Circuits with High Extinction Ratio in O-band and Short-Wavelength Infrared Range

Yuefei Cai
Photonic and Optical Devices
article

GaN Photonic Integrated Circuits with High Extinction Ratio in O-band and Short-Wavelength Infrared Range

Yuefei Cai
article en

Abstract

A microring resonator with an intrinsic Q-factor of ∼2.67 × 104 and an extinction ratio (ER) of 35.1 dB at 1320 nm, is monolithically integrated with grating couplers and a ridge waveguide on a GaN-on-sapphire platform. By further designing apodized grating couplers, working wavelength of our GaN PIC extends to near infrared wavelength (~2.1 um).

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Photonic and Optical Devices
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GaN Photonic Integrated Circuits with High Extinction Ratio in O-band and Short-Wavelength Infrared Range — Yuefei Cai · (2025) | TGRS Research Map | TGRS