A Fabrication Method for Lifting off Wafer-Scale III-Nitride Materials with Smooth Lift-off Interfaces
Wafer-scale III-nitride epitaxial layers are selectively lifted off via an innovative electrochemical etching method, allowing epilayers to achieve ultra-high relaxation, preserved quality, and sub-nanometer root-mean-square interface roughness for diverse applications, as demonstrated with micro-light-emitting diodes.
Authors
- Yifan Yao (ORCID: https://orcid.org/0000-0003-4960-7471)
- Michael Iza (ORCID: https://orcid.org/0000-0002-8695-1557)
- Shuji Nakamura (ORCID: https://orcid.org/0000-0001-6334-2428)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Hsiaotao T. Bi (ORCID: https://orcid.org/0009-0004-1393-7633)
- Toru Inatome (ORCID: https://orcid.org/0009-0001-7172-4335)
- Ibraheem Aljarboua (ORCID: https://orcid.org/0009-0008-6841-3801)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.jps200_122
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00