Continuous Wave Mid-Infrared Lasing from Single InAs Nanowires Grown on Silicon
We report on the mid-infrared continuous wave (cw) lasing of InAs nanowires (NW) grown on Si by optimizing NW geometry via threshold gain calculations and selective area epitaxial approaches. NWs with diameters above 700nm show cw-lasing at ~2.4-2.7µm for a large range of cavity lengths (10-30µm) and temperatures with threshold as low as 1.4kW/cm 2 .
Authors
- Steffen Meder
- Gregor Koblmüller (ORCID: https://orcid.org/0000-0002-7228-0158)
- Jens-Peter Zöllner (ORCID: https://orcid.org/0000-0002-1409-7726)
- Jonathan J. Finley (ORCID: https://orcid.org/0000-0003-3036-529X)
- Paul Schmiedeke (ORCID: https://orcid.org/0000-0003-4533-439X)
- Fabio Giudice (ORCID: https://orcid.org/0000-0002-4940-6277)
- D. Busse
- Benjamin Haubmann
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.ss126_6
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00