Pushing the boundaries of deep UV laser diode technology

AlGaN-based deep ultraviolet (DUV) lasers hold great promise for applications in sterilization, sensing, and precision laser processing due to their compact size, high efficiency, and environmental benefits. However, challenges in crystal growth and current injection have limited their realization. Our research has overcome these hurdles by optimizing epitaxial growth and device design, achieving room temperature continuous-wave operation for the first time. Key innovations, including stress management through tilted mesa structures, have significantly improved device performance by reducing defects. This presentation will highlight these breakthroughs and discuss the remaining challenges in advancing DUV laser technology.