Direct and converse magnetoelectric effect for advanced spintronic applications

Magnetoelectric (ME) composite materials, which integrate piezoelectric and magnetostrictive layers, offer a promising route for electric-field control of magnetization—an essential capability for next-generation low-power spintronic devices. In this work, we investigate the ME coupling in two distinct systems: sub-micron nickel (Ni) stripes on lead zirconate titanate (PZT) substrates, and PVDF-TrFE/Ni bilayer composites. Using anisotropic magnetoresistance (AMR) measurements, we demonstrate voltage-induced magnetoelastic fields in Ni stripes, reaching up to −3.5 mT/V. Finite element simulations in COMSOL Multiphysics, coupled with micromagnetic modeling, reveal the strain distribution and magnetization dynamics responsible for this behavior. Additionally, we explore the direct ME effect in PVDF-TrFE/Ni composites by measuring charge accumulation during out-of-plane magnetization rotation. Voltage differentials up to 75 mV are observed, with results validated by simulations and magnetic hysteresis measurements. These findings highlight the potential of engineered ME heterostructures for scalable, CMOS-compatible spintronic applications.