Magnetoresistive random access memory (MRAM) for space and radiation-hardened applications

Magnetoresistive Random Access Memories (MRAMs) are of interest for space and radiation-hardened electronics, data systems, and computing applications, including Von Neumann and Edge AI (Artificial Intelligence) architectures and applications. MRAMs use Magnetic Tunnel Junctions (MTJs) as bits to store and read data. Readback is performed using spin-dependent tunneling. Writing is performed inductively in Toggle MTJs and with the transfer of spin-dependent electronic angular momentum to magnetization in Spin-Transfer Torque (STT) MTJs. MRAMs therefore offer advantages relative to alternative non-volatile solid-state memory technologies. Honeywell has QML-qualified 16Mb single-chip package (SCP) and 64Mb multi-chip module (MCM) Toggle MRAM products; and is developing products to scale towards and then beyond gigabit SCP and gigabyte MCM MRAMs to offer long life, practically unlimited write and read endurance, practically unlimited data retention, non-destructive readback, fast write and read cycle times, radiation hardness, and low error rates across a broad temperature range.