Controlling Hall response in epitaxial Mn3Sn thin films

Harnessing strain in thin films presents an exciting avenue for tailoring material properties by design. In this talk, I will show how anisotropic strain can dramatically transform the interactions that stabilize non-trivial magnetic textures in Kagome systems. Such a magnetic state breaks certain symmetries that modifies the electronic structure and gives rise to a pronounced anomalous Hall effect. What’s particularly fascinating is that the domain configurations of these newly induced magnetic states can be precisely controlled by heat-assisted electrical switching. This capability opens the door to accessing multiple-stable anomalous Hall resistance memory states at room temperature, paving the way for innovative applications in cutting-edge computing paradigms and spin-based memory devices.