Magnetotransport across 2D materials interfaces
2D materials have emerged as key players in spintronics due to their unique electronic and magnetic properties. However, experimental results have been below expectations due to challenges in the realization of high-quality interfaces. We have devised a method that yields ultra-clean interfaces between 2D materials and their contacts using a single-step fabrication approach. This talk will review our advances in understanding and controlling the interactions at the interface leveraging this innovative method. Antiferromagnetic interfacial coupling was identified as the origin of performance limitation in single-layer graphene devices, that could be controlled through suppression of interfacial oxidation. Single-layer MoS2 devices show a metallization effect that is minimized by expanding the layer thickness. Finally, pristine MoS2 shows an unexpected negative magneto-resistance effect that emphasizes the impact of spin-scattering processes.
Authors
- Mario Hofmann
Institutions
- National Taiwan University (TW)
Publication Details
- Published
- 2025-09-18
- DOI
- https://doi.org/10.1117/12.3062822
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00