Magnetotransport across 2D materials interfaces

2D materials have emerged as key players in spintronics due to their unique electronic and magnetic properties. However, experimental results have been below expectations due to challenges in the realization of high-quality interfaces. We have devised a method that yields ultra-clean interfaces between 2D materials and their contacts using a single-step fabrication approach. This talk will review our advances in understanding and controlling the interactions at the interface leveraging this innovative method. Antiferromagnetic interfacial coupling was identified as the origin of performance limitation in single-layer graphene devices, that could be controlled through suppression of interfacial oxidation. Single-layer MoS2 devices show a metallization effect that is minimized by expanding the layer thickness. Finally, pristine MoS2 shows an unexpected negative magneto-resistance effect that emphasizes the impact of spin-scattering processes.

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Published
2025-09-18
DOI
https://doi.org/10.1117/12.3062822
Primary Topic
Magnetic properties of thin films
Type
article
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article

Magnetotransport across 2D materials interfaces

Mario Hofmann
Magnetic properties of thin films
article

Magnetotransport across 2D materials interfaces

Mario Hofmann
article en

Abstract

2D materials have emerged as key players in spintronics due to their unique electronic and magnetic properties. However, experimental results have been below expectations due to challenges in the realization of high-quality interfaces. We have devised a method that yields ultra-clean interfaces between 2D materials and their contacts using a single-step fabrication approach. This talk will review our advances in understanding and controlling the interactions at the interface leveraging this innovative method. Antiferromagnetic interfacial coupling was identified as the origin of performance limitation in single-layer graphene devices, that could be controlled through suppression of interfacial oxidation. Single-layer MoS2 devices show a metallization effect that is minimized by expanding the layer thickness. Finally, pristine MoS2 shows an unexpected negative magneto-resistance effect that emphasizes the impact of spin-scattering processes.

National Taiwan University (TW)
Openalex Percentile: Top 80%
Magnetic properties of thin films
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Magnetotransport across 2D materials interfaces — Mario Hofmann · (2025) | TGRS Research Map | TGRS