Research on DC-Drift of TFLN modulator

To delve into the DC-drift phenomenon of the Thin-Film Lithium Niobate (TFLN) modulator, we have comprehensively applied theoretical analysis, experimental research, and numerical simulation methods. The generation mechanism, influencing factors, and suppression strategies of DC-drift are systematically investigated. The experimental results show that optimizing the material properties, structural design, and adopting appropriate circuit control techniques can effectively suppress the DC-drift of the TFLN modulator, providing a theoretical and practical basis for improving the performance and stability of TFLN-based optical devices.