Progress of AlGaN-based 230nm-band far-UVC LEDs and its applications

Far-UVC light with a wavelength of 230 nm or less are harmless to human body and have a strong inactivating effect for virus. We demonstrated 228-236 nm AlGaN-based far-UVC LEDs for the purpose of virus inactivation in the human working space. We achieved the external quantum efficiency (EQE) of more than 1.5 % by introducing polarization induced p-type AlGaN layer for a 230 nm-band LED. We fabricated 230nm LED module by integrating several tens of LED tips and a parabolic mirror on the copper mount and obtained over 200 mW power under pulse operation.

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Publication Details

Published
2025-09-18
DOI
https://doi.org/10.1117/12.3066055
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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Progress of AlGaN-based 230nm-band far-UVC LEDs and its applications

Eriko Matsuura, Ali Hossain Khan, Yukio Kashima, Hiromitsu Sakai et al.
GaN-based semiconductor devices and materials
article

Progress of AlGaN-based 230nm-band far-UVC LEDs and its applications

Eriko Matsuura, Ali Hossain Khan, Yukio Kashima, Hiromitsu Sakai, Hideki Hirayama
article en

Abstract

Far-UVC light with a wavelength of 230 nm or less are harmless to human body and have a strong inactivating effect for virus. We demonstrated 228-236 nm AlGaN-based far-UVC LEDs for the purpose of virus inactivation in the human working space. We achieved the external quantum efficiency (EQE) of more than 1.5 % by introducing polarization induced p-type AlGaN layer for a 230 nm-band LED. We fabricated 230nm LED module by integrating several tens of LED tips and a parabolic mirror on the copper mount and obtained over 200 mW power under pulse operation.

Nitto RIKEN (Japan) (JP), ShinEtsu Chemical (Japan) (JP)
Openalex Percentile: Top 84%
GaN-based semiconductor devices and materials
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