The characteristics of graphene-based photoelectric device under extreme conditions

In the face of the urgent need for ultra-sensitive detection in the new generation of complex photoelectric environment, traditional silicon-based detectors cannot achieve high-sensitivity detection in micro-size and extreme environments. Carbon-based materials are expected to achieve high-sensitivity detection in complex environments due to their high electron mobility and temperature stability. Based on the above problems, this paper studies the photoelectric working mechanism by analyzing the photoelectron distribution of carbon-based detectors. Subsequently, it was verified by experiments. The graphene band gap was opened under high pressure conditions (6.4 Gpa), and<i>in-situ</i>detection was carried out by Raman and ultraviolet absorption spectra. Thereafter, a stable wide band gap carbon-based semiconductor photodetector was successfully fabricated. Eventually, its photoelectric detection performance was tested under various temperature conditions (420-80 K). This process confirmed the operational stability of the carbon-based photodetector in extreme temperature environments and provided a valuable reference for the development of a new generation of detectors suitable for extreme conditions.