Giant magnetoresistance in planar Mn₂CF₂/Ti₂CF₂/Mn₂CF₂/Ti₂CF₂/Mn₂CF₂ heterojunction

Abstract The discovery of two-dimensional magnetic materials offers new avenues for developing giant magnetoresistive (GMR) devices. In this study, we investigate the transport properties of planar Mn 2 CF 2 /Ti 2 CF 2 /Mn 2 CF 2 /Ti 2 CF 2 /Mn 2 CF 2 heterojunctions using first-principles calculations combined with non-equilibrium Green’s function. The largest magnetoresistance ratio (MR) of these heterojunctions reaches <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:mn>2.25</mml:mn> <mml:mo>×</mml:mo> <mml:mrow> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mn>11</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:mrow> </mml:math> , surpassing conventional GMR devices by 8 orders of magnitude. Notably, the MR can be modulated by adjusting the length of the middle Mn 2 CF 2 layer. This work demonstrates the significant potential of these heterojunctions for spintronic applications such as magnetic random-access memories, magnetic sensors, and hard disk drives.