Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> RF MESFETs
Abstract Attempts were made to use mist CVD for the fabrication of β -Ga 2 O 3 RF MESFETs. For a device with a gate length and width of L G = 0.45 μm and W G = 150 μm, respectively, the current gain cut-off frequency ( f T ) and the maximum oscillation frequency ( f max ) were 8.3 GHz and 18.4 GHz, respectively, and the electron velocity was calculated to be 2.3 × 10 6 cm s −1 . These values are comparable to those of other reported devices, suggesting the potential of mist CVD as a safe and cost-effective growth technology for RF devices.
Authors
- H. Takahashi (ORCID: https://orcid.org/0000-0001-7402-3609)
- Katsuhisa Tanaka (ORCID: https://orcid.org/0000-0002-1409-2802)
- Ryutaro Makisako
- Takeru Wakamatsu (ORCID: https://orcid.org/0009-0004-2141-9529)
- Shizυo Fujita (ORCID: https://orcid.org/0000-0001-6384-6693)
- Jun Suda (ORCID: https://orcid.org/0000-0002-5453-4943)
- Tetsuzo Ueda (ORCID: https://orcid.org/0000-0003-3615-4354)
- Yuji Ando (ORCID: https://orcid.org/0000-0003-3937-5451)
- Hikaru Ikeda
- H. Sugaya
Institutions
- Panasonic (Japan) (JP)
- Kyoto University (JP)
- Kyoto University of Education (JP)
- Nagoya University (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-09-18
- DOI
- https://doi.org/10.35848/1347-4065/ae0907
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43