Advancing SiC development for radiation measurement at high temperatures and quantum sensing

Wide band-gap (WBG) semiconductors offer superior stability and the ability to operate at elevated temperatures and intense radiation field. Among these materials, 4H-Silicon Carbide (SiC) is particularly promising for radiation sensing applications in fission and fusion systems. This presentation highlights research at the Nuclear Analysis and Radiation Sensor (NARS) lab at The Ohio State University, including the development of SiC radiation sensors for high-temperature use, field-deployable sensors for uranium isotopic measurement, and our development in SiC avalanche photodiodes. Additionally, I will present our ongoing work on WBG materials for emerging field of quantum sensors for radiation dosimetry.