Enhanced emission of GaAs quantum dots in bend nanomembranes

We present a streamlined method to boost single-photon emission from GaAs quantum dots in AlGaAs membranes by combining membrane bending with a reflective gold layer. The process involves selective etching, transfer, and alignment onto conical photoresist structures (2–2.5μm), minimizing fabrication steps. This design enhances optical extraction efficiency by up to a factor of eight - approximately half from the gold layer and the remaining factor of four from membrane bending. Strain induced during bending increases average fine-structure splitting (FSS) from 10 ± 0.3μeV to 17 ± 0.3μeV, while some dots exhibit reduced FSS (as low as 2μeV), indicating potential for entangled photon generation. Our approach offers a practical route for scalable, high-performance quantum dot singlephoton sources suited for integrated quantum photonic and fiber-coupled networks.