Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiC<sup>TM</sup> Engineered Substrates

The improvement of the electrical properties of power semiconductors using engineered substrates is becoming increasingly significant. This paper investigates the dynamic performance and robustness of SiC MOSFETs based on SmartSiC TM engineered substrates, focusing on the reverse recovery of the body diode and their ruggedness under overload conditions such as short-circuit and surge current. A comparison with SiC MOSFETs based on conventional monocrystalline substrates was performed to evaluate the results. A significant decrease in reverse recovery charge was observed, particularly at higher temperatures, while the robustness during short-circuit type I and surge current was not affected.