Optimization of Gate Oxide Screening Technology for Commercial SiC Discrete MOSFETs and Power Modules

This study demonstrates a negative correlation between gate leakage current () and time to breakdown () of gate oxide in various commercial SiC discrete MOSFETs and power modules. SiC MOSFETs with higher leakage current at the same gate voltage exhibit lower oxide failure time in the constant-voltage Time-Dependent Dielectric Breakdown (TDDB) test. The novelty lies in the discovery that measured under conditions of either low gate voltage () at RT or high at 150°C can be utilized to identify discrete devices or power modules with non-infant failures or lower intrinsic lifetime. Aggressive screening based on helps to reduce non-infant extrinsic failure probability and identify devices with more uniformity of intrinsic lifetime.