Cryogenic Characterization of Surface-Illuminated Ge-on-Si Photodiodes for Free-Space Optical Sensing

The cryogenic performance of surface-illuminated Ge-on-Si photodiodes was characterized across temperature, focusing on dark current, responsivity, and detectivity variations with Ge film thickness. The findings highlight the potential of Ge-on-Si photodetectors for cryogenic sensing applications.

Authors

Stefan Lischke (ORCID: https://orcid.org/0000-0003-1361-2842)
F. Goetz
John D. Cressler (ORCID: https://orcid.org/0000-0001-8268-5135)
Justin P. Heimerl (ORCID: https://orcid.org/0000-0001-7475-6642)
Mozhgan Hosseinzadeh (ORCID: https://orcid.org/0000-0002-2564-1256)

Publication Details

Published: 2025-01-01
DOI: https://doi.org/10.1364/cleo_at.2025.jps200_96
Primary Topic: Photonic and Optical Devices
Type: article
Field-Weighted Citation Impact: 0.00

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article

Cryogenic Characterization of Surface-Illuminated Ge-on-Si Photodiodes for Free-Space Optical Sensing

Stefan Lischke, F. Goetz, John D. Cressler, Justin P. Heimerl et al.

Jan 1, 2025

Photonic and Optical Devices

article

Cryogenic Characterization of Surface-Illuminated Ge-on-Si Photodiodes for Free-Space Optical Sensing

Stefan Lischke, F. Goetz, John D. Cressler, Justin P. Heimerl, Mozhgan Hosseinzadeh

January 1, 2025article en

Abstract

The cryogenic performance of surface-illuminated Ge-on-Si photodiodes was characterized across temperature, focusing on dark current, responsivity, and detectivity variations with Ge film thickness. The findings highlight the potential of Ge-on-Si photodetectors for cryogenic sensing applications.

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Photonic and Optical Devices

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Cryogenic Characterization of Surface-Illuminated Ge-on-Si Photodiodes for Free-Space Optical Sensing — Stefan Lischke, F. Goetz, et al. · (2025) | TGRS Research Map | TGRS