Strain Mediated Growth of Uniform Diameter Si-Nanocrystals on MgO Buffer and Their Optical Constants

We discuss, how by exploiting large interfacial-stress between 5nm Si-film and 10nm MgO-buffer large diameter (> 34nm) uniform Si-nanocrystals (NCs) could be grown through a low-temperature (300°C) process. Optical constants of Si-NCs were further determined.

Authors

Mandeep Jangra (ORCID: https://orcid.org/0000-0001-5834-7566)
Arnab Datta (ORCID: https://orcid.org/0000-0002-2931-1991)

Publication Details

Published: 2025-01-01
DOI: https://doi.org/10.1364/cleo_at.2025.jps200_64
Primary Topic: Silicon Nanostructures and Photoluminescence
Type: article
Field-Weighted Citation Impact: 0.00

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article

Strain Mediated Growth of Uniform Diameter Si-Nanocrystals on MgO Buffer and Their Optical Constants

Mandeep Jangra, Arnab Datta

Jan 1, 2025

Silicon Nanostructures and Photoluminescence

article

Strain Mediated Growth of Uniform Diameter Si-Nanocrystals on MgO Buffer and Their Optical Constants

Mandeep Jangra, Arnab Datta

January 1, 2025article en

Abstract

Openalex Percentile: Top 81%

Silicon Nanostructures and Photoluminescence

DOI Source OpenAlex

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Strain Mediated Growth of Uniform Diameter Si-Nanocrystals on MgO Buffer and Their Optical Constants — Mandeep Jangra, Arnab Datta · (2025) | TGRS Research Map | TGRS