Enhancing Diamond Color Center Yield Via Ultraviolet Irradiation During High-Temperature Annealing
We show increase of silicon vacancy color-center yield following focused ion beam implantation of Si ions into a diamond substrate. The improvement is achieved by irradiating the sample with ultraviolet light during high-temperature annealing.
Authors
- Jacob Henshaw
- Yifan Yao (ORCID: https://orcid.org/0000-0003-3687-2102)
- Michael Titze (ORCID: https://orcid.org/0000-0003-4701-4453)
- Coleman Cariker (ORCID: https://orcid.org/0000-0001-9553-4133)
- Andrew Mounce (ORCID: https://orcid.org/0000-0002-8115-2764)
- André Schleife (ORCID: https://orcid.org/0000-0003-0496-8214)
- Luca Basso (ORCID: https://orcid.org/0000-0002-7941-9976)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_at.2025.jps200_69
- Primary Topic
- Nonlinear Optical Materials Studies
- Type
- article
- Field-Weighted Citation Impact
- 0.00