Structural origin of the light-induced spectral gap suppression in Ta2NiSe5

Using MeV ultrafast electron diffraction to map out atomic trajectories, we revealed that reduced monoclinic distortion primarily explains the photoinduced gap suppression in the electronic structure of Ta 2 NiSe 5 , a leading excitonic insulator candidate.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/cleo_fs.2025.ff135_2
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Structural origin of the light-induced spectral gap suppression in Ta2NiSe5

Qing Xu, Jun Li, Nanlin Wang, Pengfei Zhu et al.
Chalcogenide Semiconductor Thin Films
article

Structural origin of the light-induced spectral gap suppression in Ta2NiSe5

Qing Xu, Jun Li, Nanlin Wang, Pengfei Zhu, Qiaomei Liu, Chenhang Xu, Dao Xiang, Xiao Zou, Dong Wu, Weichen Tang, Dong Qian, Alfred Zong, Chendi Xie, Zhiwei Wang, Tao Jiang, Zijing Chen
article en

Abstract

Using MeV ultrafast electron diffraction to map out atomic trajectories, we revealed that reduced monoclinic distortion primarily explains the photoinduced gap suppression in the electronic structure of Ta 2 NiSe 5 , a leading excitonic insulator candidate.

Openalex Percentile: Top 75%
Chalcogenide Semiconductor Thin Films
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