First MBE-Grown Continuous-Wave Electrically-Pumped AlGaN UV-A Lasers with Buried Tunnel Junctions
We demonstrate the first MBE-grown, electrically pumped, continuous-wave AlGaN- based UV-A lasers with a tunnel junction, having a threshold current density of 6 kA/cm2 at a record- low applied voltage of 8 V at room temperature.
Authors
- Arnob Ghosh (ORCID: https://orcid.org/0000-0003-0793-7536)
- Siddharth Rajan (ORCID: https://orcid.org/0000-0003-4241-3391)
- Shamsul Arafin (ORCID: https://orcid.org/0000-0003-4689-2625)
- Agnes Maneesha Dominic Merwin Xavier (ORCID: https://orcid.org/0000-0002-4476-3224)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/cleo_si.2025.pd102_6
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00