Effect of Nano-SiC Loading on Surface Discharge Performance of Polyimide at High-Frequency Electric Stress

This study targets insulation challenges in high-frequency power transformers (HFPTs), which are an integral part of the high-voltage, high-capacity isolated DC/DC converter under development for offshore renewable energy systems. We propose a nano-silicon carbide (SiC)-doped polyimide (PI) winding insulation strategy to enhance discharge resistance and thermal stability under high-frequency electric stress. Experimental results show that 10 wt% SiC doping significantly improves insulation performance, extending failure time from 17 to 50 min and reducing maximum discharge amplitude by 76%, owing to enhanced charge trapping and interfacial polarization suppression. Surface and volume resistivity measurements further confirmed the improvement; at 120 °C, the 10 wt% SiC composite maintained high surface resistivity 3.30 × 10¹⁴ Ω and volume resistivity 1.41 × 10¹⁵ Ω·cm, significantly outperforming pure PI. In contrast, 20 wt% SiC, though still resistive, showed reduced stability due to agglomeration and interfacial defects, with a surface resistivity of 2.07 × 10¹⁴ Ω and degraded dielectric performance. Dielectric analysis revealed that 10 wt% SiC suppressed dielectric constant and loss across the frequency range, while 20 wt% SiC exhibited increased values at high frequency. These results highlight 10 wt% SiC as an optimal formulation for HFPT winding insulation.