Influence of a magnetic field on double-porosity photo-thermoelastic materials under Lord–Shulman theory
Abstract This study explores the influence of a magnetic field on a two-dimensional photo-thermoelastic material with a dual porous structure, based on the Lord–Shulman theory of thermoelasticity. The model presents a novel approach to understanding magneto-thermoelastic interactions in such elastic semiconductor materials. The model incorporates the Lorentz force to account for magnetoelastic interactions and considers a uniform double-porosity thermoelastic half-space. Analytical expressions for key physical quantities are derived using the normal mode analysis technique, assuming exponential representations for the variables. The governing equations for the generalized double-porosity structure of photo-thermoelastic materials, incorporating a single relaxation time, are formulated and solved under specific boundary conditions. The results provide insights into the coupled behavior of thermal, elastic, and electromagnetic fields in dual-porosity materials and highlight the significant role of magnetic fields in influencing wave propagation and stress distribution. The work underscores the critical role of magnetic fields in altering wave propagation and stress behavior, offering potential advancements in materials science and engineering applications.
Authors
- Borhen Halouani (ORCID: https://orcid.org/0000-0001-9566-7235)
- Ibrahim S. Elshazly (ORCID: https://orcid.org/0000-0001-6364-3327)
- Eslam S. Elidy (ORCID: https://orcid.org/0000-0003-2989-0716)
- Kh. Lotfy (ORCID: https://orcid.org/0000-0001-9383-1361)
- Saurav Sharma (ORCID: https://orcid.org/0000-0001-7513-7501)
- Ramdan S. Tantawi
Institutions
- Zagazig University (EG)
- King Saud University (SA)
- University of Houston (US)
Publication Details
- Journal
- Open Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1515/phys-2025-0154
- Primary Topic
- Thermoelastic and Magnetoelastic Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00